Ramesh Ramamoorthy

Ramesh Ramamoorthy, born in 1960 is an American Scientist from the Indian descent who has greatly developed the organization, assembly, and perception of complex functional oxides, such as Ferroelectric elements, laying the basis for development and use of multiferroic materials. In particular, his work established the growth of Ferroelectric Perovskites, Manganites with Multiferroic Oxides and Colossal Magneto Resistance, with great influence on the elementary physics and with the potential for important benefits for advanced information technologies.

He has served as an Educator at the University of California in the Departments of Physics and Materials Science and Engineering. He also manages more than 500 scientists as the Associate Laboratory Director in the Department of Energy Technologies at the Lawrence Berkeley National Laboratory. He has written over 540 papers in globally accepted journals which have been mentioned more than 54,000 times. He has been published 27 patents, and his method for fabricating ferroelectric materials for blind access concept has been used by the world’s largest memory companies.

In the year 1980, Ramesh obtained his Bachelor of Science grade in the Department of Chemistry from the Madras University. In 1983, he graduated from the Indian Institute of Science in Bangalore with a Bachelor's Degree in Metallurgy. He earned his Doctorate in Materials Science from the University of California in the year 1987. He then worked at the National Center for Electron Microscopy in the position of a Postdoctoral Associate in Lawrence Berkeley National Laboratory (LBNL).

He further went to Bell Communications Research in 1989 and began research in various key electrical device technologies, which included the Ferroelectric Non-Volatile Memories. Ramesh entered the University of Maryland in 1995 and was appraised as a Professor in 1999 and gained a much higher Professor position in 2003. The same year he became a part of the University of California as a faculty in the Physics Departments and Department of Materials Science and Engineering. He currently works for Energy Technologies as Purnendu Chatterjee as a Chairperson.

 In 2004, he joined Lawrence Berkeley National Laboratory as a faculty Scientist and later became the Associate Laboratory Director (ALD) for the Department of Energy Technologies in 2014. In his role as ALD, he worked as a strategic head and for three Laboratory Divisions focused on Energy Technologies. The Energy Technologies Area carries research for the U.S. Office of Energy other governmental entities, as well as for state parties, with a focus on the private sector of California.

Ramesh worked under Energy Secretary Chu in the position of a Founding Director whose main aim was to bring down the cost of solar electricity to grid equality. One notable result of his position as the director has been to establish the scientific foundations for solar energy research. Later, he also gained a prominent position at Oak Ridge National Laboratory. Ramesh explored the development of thin film ferroelectric materials for random access memory (FRAMS), which he started first at Bellcore’s Red Bank, then at the New Jersey facility, and later at the University of Maryland.

He was the first to show that carrying oxide electrodes reduce the 30-year old obstacle of polarization weakness, managed through conservative control of the physics of the electrode-ferroelectric interface. This was an important step in the growth of good FRAM devices and became used by many companies such as Texas Instruments, Fujitsu, and others companies worldwide. His work has also been converted into a novel which can make people more easily understand the fiction to create semi-conductor. He holds over 20 controls in the field of ferroelectric thin layers and devices.